Характеристики
IRLZ14PBF, МОП-транзистор, N Канал, 10 А, 60 В, 200 мОм, 5 В, 2 ВThe IRLZ14PBF is a 60V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance.
• Dynamic dV/dt rating
• 175 C Operating temperature
• Fast switching
• Easy to parallel
• Simple drive requirement
Полупроводники — ДискретныеТранзисторыМОП-транзисторы