IRF6621TR1, МОП-транзистор, N Канал, 12 А, 30 В, 7 мОм

Характеристики

IRF6621TR1, МОП-транзистор, N Канал, 12 А, 30 В, 7 мОм The IRF6621TR1 is a DirectFET™ N-channel Power MOSFET ideal for CPU core DC-to-DC converters. It combines the latest HEXFET® power MOSFET silicon technology with the advanced DirectFET™ packaging to achieve the lowest ON-state resistance in a package. It is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infrared or convection soldering techniques. It allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. It balances both low resistance and low charge along with ultra-low package inductance to reduce both conduction and switching losses. The IRF6621 has been optimized for parameters that are critical in synchronous buck operating from 12V bus converters including RDS (ON) and gate charge to minimize losses in the control FET socket. It is optimized for high frequency switching and control FET application.

• Dual-sided cooling compatible
• Low conduction and switching losses
• Compatible with existing surface-mount techniques

Полупроводники — ДискретныеТранзисторыМОП-транзисторы