DN2540N5-G, МОП-транзистор, N Канал, 500 мА, 400 В, 17 Ом, 0 В

Характеристики

DN2540N5-G, МОП-транзистор, N Канал, 500 мА, 400 В, 17 Ом, 0 ВThe DN2540N5-G is a 400V N-channel Depletion Mode (normally-on) Transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, the transistor is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.

• High input impedance
• Low input capacitance
• Fast switching speeds
• Low on-resistance
• Free from secondary breakdown
• Low input and output leakage

Полупроводники — ДискретныеТранзисторыМОП-транзисторы